Nanoscale refractory doped titanium nitride field emitters
نویسندگان
چکیده
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at peak current densities optical intensities. Recent results have demonstrated properties titanium nitride, a refractory CMOS-compatible plasmonic material, can be tuned by adding silicon oxygen dopants. However, to fully leverage potential (silicon oxy)nitride, reliable scalable fabrication process with few-nm precision needed. In this work, we developed producing engineered nanostructures gaps between 10 15 nm, aspect ratios larger than 5 almost 90° steep sidewalls. Using process, fabricated large-scale arrays electrically-connected bow-tie nanoantennas free-space gaps. We measured typical variation 4 nm in average gap size. applied DC voltages illumination, tested electronic optoelectronic response devices, demonstrating sub-10-V tunneling across gaps, quantum efficiency up 110-3 1.2 μm, comparable bulk photodiode same wavelength three orders magnitude higher nearly identical gold devices. Tests oxynitride did not significantly degrade, exhibiting less shrinking dimensions over few-μm2 areas after hours operation. Our will useful developing next generation robust devices high-speed low-power applications.
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2021
ISSN: ['1361-6528', '0957-4484']
DOI: https://doi.org/10.1088/1361-6528/abf8de